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| BSS806N OptiMOSTM2 Small-Signal-Transistor Features * N-channel * Enhancement mode * Ultra Logic level (1.8V rated) * Avalanche rated * Qualified according to AEC Q101 * 100% lead-free; RoHS compliant Product Summary V DS R DS(on),max V GS=2.5 V V GS=1.8 V ID 20 57 82 2.3 A V m PG-SOT23 3 1 2 Type BSS806N Package SOT23 Tape and Reel Information L6327: 3000 pcs/ reel Marking YEs Lead Free Yes Packing Non dry Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T A=25 C T A=70 C Pulsed drain current Avalanche energy, single pulse I D,pulse E AS T A=25 C I D=2.3 A, R GS=25 I D=2.3 A, V DS=16 V, di /dt =200 A/s, T j,max=150 C Value 2.3 1.9 9.3 10.8 mJ Unit A Reverse diode dv /dt Gate source voltage Power dissipation1) Operating and storage temperature ESD Class Soldering Temperature IEC climatic category; DIN IEC 68-1 dv /dt V GS P tot T j, T stg 6 8 kV/s V W C T A=25 C 0.5 -55 ... 150 JESD22-A114 -HBM 0(<250V) 260 C 55/150/56 Rev 2.2 page 1 2010-03-25 BSS806N Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - ambient R thJA 1) Values typ. max. Unit minimal footprint - - 250 K/W Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Drain-source leakage current V (BR)DSS V GS= 0 V, I D= 250 A V GS(th) I DSS V DS=VGS , I D=11 A V DS=20 V, V GS=0 V, T j=25 C V DS=20 V, V GS=0 V, T j=150 C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=8 V, V DS=0 V V GS=1.8 V, I D=1.3 A V GS=2.5 V, I D=2.3 A Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=1.9 A 20 0.3 0.55 0.75 1 A V - 57 41 9 100 100 82 57 S nA m 1) Performed on 40mm2 FR4 PCB. The traces are 1mm wide, 70m thick and 20mm long; they are present on both sides of the PCB. Rev 2.2 page 2 2010-03-25 BSS806N Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge IS I S,pulse V SD t rr Q rr T A=25 C V GS=0 V, I F=2.3 A, T j=25 C V R=10 V, I F=2.3 A, di F/dt =100 A/s 0.82 11 3.3 0.5 9.3 1.1 V ns nC A Q gs Q gd Qg V plateau V DD=10 V, I D=2.3 A, V GS=0 to 2.5 V 0.55 0.58 1.7 1.5 V nC C iss C oss Crss t d(on) tr t d(off) tf V DD=10 V, V GS=2.5 V, I D=2.3A, R G=6 V GS=0 V, V DS=10 V, f =1 MHz 370 118 20 7.5 9.9 12.0 3.7 529 169 29 ns pF Values typ. max. Unit Rev 2.2 page 3 2010-03-25 BSS806N 1 Power dissipation P tot=f(T A) 2 Drain current I D=f(T A); V GS2.5 V 2.5 0.5 2.0 0.375 1.5 P tot [W] 0.25 I D [A] 1.0 0.5 0.0 0 40 80 120 160 0 20 40 60 80 100 120 140 160 0.125 0 T A [C] T A [C] 3 Safe operating area I D=f(V DS); T A=25 C; D =0 parameter: t p 102 4 Max. transient thermal impedance Z thJA=f(t p) parameter: D =t p/T 103 101 1 ms 10 ms 100 s 10 s 0.5 102 0.2 0.1 Z thJA [K/W] 100 I D [A] 0.05 101 0.02 0.01 single pulse 10 -1 DC 100 10 -2 10-3 10 -1 10-1 10 0 10 1 10 2 10-5 10-4 10-3 10-2 10-1 100 101 102 V DS [V] t p [s] Rev 2.2 page 4 2010-03-25 BSS806N 5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS 4 2.5 V 1.8 V 1.6 V 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS 120 1.3 V 1.4 V 100 1.5 V 1.6 V 3 80 1.5 V R DS(on) [m] I D [A] 2 60 1.8 V 2V 1.4 V 40 2.5 V 1 1.3 V 20 1.2 V 1.1 V 0 0 1 2 3 4 1.6 2.0 0 0.0 0.4 0.8 V DS [V] 1.2 I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max 8 Typ. forward transconductance g fs=f(I D); T j=25 C 4 20 16 3 12 2 g fs [S] 8 150 C 25 C I D [A] 1 4 0 0.0 0.5 1.0 1.5 2.0 0 0 2 4 6 8 V GS [V] I D [A] Rev 2.2 page 5 2010-03-25 BSS806N 9 Drain-source on-state resistance R DS(on)=f(T j); I D=2.3 A; V GS=2.5 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V DS=VGS; I D=11 A parameter: I D 100 1.2 80 0.8 98 % 98 % R DS(on) [m] 60 V GS(th) [V] typ 0.4 2% 40 typ 0 20 0 -60 -20 20 60 100 140 180 -0.4 -60 -20 20 60 100 140 180 T j [C] T j [C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz; Tj=25C 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 103 101 Ciss 100 25 C 150 C, 98% C [pF] Coss 10 2 I F [A] 10-1 150 C 25 C, 98% 10-2 Crss 101 0 5 10 15 20 10-3 0 0.4 0.8 1.2 1.6 V DS [V] V SD [V] Rev 2.2 page 6 2010-03-25 BSS806N 13 Avalanche characteristics I AS=f(t AV); R GS=25 parameter: T j(start) 101 14 Typ. gate charge V GS=f(Q gate); I D=2.3 A pulsed parameter: V DD 5 4.5 4 3.5 25 C 3 100 100 C 10 V 16 V 4V V GS [V] 103 I AV [A] 2.5 2 1.5 1 0.5 125 C 10-1 100 101 102 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 t AV [s] Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=250 A 16 Gate charge waveforms 25 V GS 24 23 22 Qg V BR(DSS) [V] 21 20 19 18 17 16 -60 -20 20 60 100 140 180 V g s(th) Q g(th) Q gs Q sw Q gd Q g ate T j [C] Rev 2.2 page 7 2010-03-25 BSS806N SOT23 Package Outline: Footprint: Packaging: Dimensions in mm Rev 2.2 page 8 2010-03-25 BSS806N Published by Infineon Technologies AG 81726 Munich, Germany (c) 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 2.2 page 9 2010-03-25 |
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